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| NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES * * * * HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz HIGH IP3: 32 dBm TYP at 1 GHz NE856M02 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M02 BOTTOM VIEW 4.50.1 1.60.2 1.50.1 NEC's NE856M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE856M02 is an excellent choice for low noise amplifiers in the VHF to UHF band and is suitable for CATV and other telecommunication applications. 0.8 MIN DESCRIPTION E B E 0.42 0.06 1.5 3.0 0.45 0.06 0.42 0.06 3.950.26 C 2.450.1 0.250.02 PIN CONNECTIONS E: Emitter C: Collector B: Base ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE2 fT CRE3 |S21E|2 NF1 NF2 PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain at VCE = 10 V, IC = 20 mA Gain Bandwidth Product at VCE = 10 V, IC = 20 mA Feed-back Capacitance at VCB = 10 V, IE = 0, f = 1.0 MHz Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 1 GHz Noise Figure 1 at VCE = 10 V, IC = 7 mA, f = 1 GHz Noise Figure 2 at VCE = 10 V, IC = 40 mA, f = 1 GHz GHz pF dB dB dB UNITS A A 50 120 6.5 0.5 12.0 1.1 1.8 3.0 0.8 MIN NE856M02 2SC5336 M02 TYP MAX 1.0 1.0 250 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. California Eastern Laboratories NE856M02 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation2 Junction Temperature Storage Temperature UNITS V V V mA W C C RATINGS 20 12 3.0 100 1.2 150 -65 to +150 ORDERING INFORMATION PART NUMBER NE856M02-T1-AZ QUANTITY 1000 PACKAGING Tape & Reel Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Device mounted on 0.7 mm X 16 cm2 double-sided ceramic substrate (copper plating). TYPICAL PERFORMANCE CURVES (TA = 25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 5.0 FEED BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2.0 Feed-back Capacitance, Cre (pF) Total Power Dissipation, PT (W) f = 1.0 MHz 3.0 2.0 Ceramic Substrate 16 cm 2 x 0.7 mm 1.0 1.0 Free Air RTH (J-A) 312.5 CW 0.5 0.8 0 50 100 150 1 3 5 10 20 30 Ambient Temperature, TA (C) Collector to Base Voltage, VCB (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V 15 INSERTION GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 1 GHz 100 Insertion Power Gain, |S21E|2 (dB) 0.5 1 5 10 50 DC Current Gain, hFE 10 50 5 20 10 0 1 3 5 10 20 30 50 100 Collector Current, Ic (mA) Collector Current, IC (mA) NE856M02 TYPICAL PERFORMANCE CURVES (TA = 25C) GAIN BAND WIDTH PRODUCT vs. COLLECTOR CURRENT 10 INSERTION GAIN AND MAXIMUM GAIN vs. FREQUENCY |S21E| MAG 2 Gain Bandwidth Product, fT (GHz) Insertion Power Gain, IS21E|2 (dB) 5 3 2 Maximum Available Gain, MAG (dB) 20 1 10 0.5 0.3 VCE = 10 V f = 1 GHz VCE = 10 V Ic = 20 mA 0 0.2 0.4 0.6 0.8 1.0 1.4 2.0 1 3 5 10 20 30 50 Collector Current, Ic (mA) Frequency, f (GHz) NOISE FIGURE vs. COLLECTOR CURRENT 7 INTERMODULATION DISTORTION vs. COLLECTOR CURRENT 6 Intermodulation Distortion, IM2 (dBc) VCE = 10 V f = 1 GHz -80 IM3 Noise Figure, NF (dB) 5 4 3 -70 -60 IM2 -50 at -40 2 { 1 0 0.5 1 5 10 50 VCE = 10 V VO = 100 dB V/50 Rg = Re 50 -30 20 30 40 IM 2 f = 90 + 100 MHz IM3 f = 2 x 200 - 190 MHz 50 60 70 Collector Current, Ic (mA) Collector Current, IC (mA) NE856M02 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 135 S22 3 GHz 90 45 j10 S21 0.1 GHz 180 S21 3 GHz S12 0.1 GHz S12 3 GHz 0 0 S11 3 GHz S22 0.1 GHz S11 0.1 GHz -j10 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz VCE = 3 V, IC = 10 mA 225 270 315 NE856M02 VCE = 3 V, IC = 10 mA FREQUENCY (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.626 0.535 0.479 0.465 0.461 0.459 0.458 0.458 0.457 0.458 0.457 0.457 0.458 0.459 0.460 0.462 ANG -67.5 -110.6 -149.7 -168.7 178.6 168.7 160.4 152.9 146.0 139.5 133.2 127.0 121.2 115.4 109.7 103.9 MAG 20.474 14.152 7.982 5.464 4.146 3.339 2.800 2.415 2.127 1.905 1.728 1.582 1.464 1.363 1.278 1.204 S21 ANG 137.7 115.2 94.8 83.6 75.2 68.0 61.5 55.5 49.9 44.6 39.5 34.7 30.2 26.0 21.9 17.9 MAG 0.031 0.044 0.059 0.073 0.089 0.104 0.121 0.138 0.155 0.171 0.188 0.205 0.222 0.239 0.256 0.272 S12 ANG 60.2 50.4 50.0 53.3 55.6 56.7 56.9 56.7 55.8 54.8 53.5 51.9 50.2 48.6 46.6 44.5 MAG 0.766 0.541 0.366 0.316 0.306 0.311 0.323 0.340 0.358 0.376 0.394 0.412 0.428 0.442 0.455 0.466 S22 ANG -36.6 -52.5 -63.4 -68.4 -72.9 -77.1 -81.0 -84.8 -88.1 -91.4 -94.3 -97.1 -99.7 -102.2 -104.8 -107.4 K 0.26 0.47 0.77 0.94 1.03 1.08 1.10 1.11 1.10 1.10 1.08 1.07 1.05 1.04 1.02 1.01 MAG (dB) 28.2 25.1 21.3 18.7 15.7 13.3 11.7 10.5 9.4 8.6 7.9 7.2 6.8 6.3 6.0 5.7 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE856M02 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 135 S11 3 GHz 90 45 j10 S21 0.1 GHz S21 3 GHz 180 S12 3 GHz S12 0.1 GHz 0 0 S22 0.1 GHz S22 3 GHz -j10 S11 0.1 GHz -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz VCE = 5 V, IC = 20 mA 225 270 315 NE856M02 VCE = 5 V, IC = 20 mA FREQUENCY (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.481 0.434 0.414 0.411 0.410 0.410 0.409 0.409 0.408 0.407 0.406 0.406 0.406 0.406 0.408 0.409 ANG -88.5 -130.1 -162.4 -178.1 171.0 162.2 154.5 147.5 140.9 134.6 128.6 122.7 117.0 111.4 105.9 100.4 MAG 28.679 17.703 9.494 6.428 4.855 3.900 3.265 2.810 2.471 2.208 2.000 1.829 1.689 1.571 1.471 1.384 S21 ANG 129.0 108.4 91.4 81.9 74.4 67.9 61.9 56.3 51.0 45.9 41.1 36.4 32.0 27.7 23.7 19.7 MAG 0.023 0.031 0.048 0.066 0.084 0.101 0.120 0.137 0.154 0.172 0.188 0.205 0.222 0.238 0.253 0.268 S12 ANG 57.9 56.9 62.0 64.1 65.0 64.4 63.2 61.8 60.0 58.2 56.2 54.1 52.0 49.8 47.6 45.3 MAG 0.664 0.445 0.311 0.280 0.280 0.290 0.305 0.323 0.343 0.362 0.381 0.399 0.416 0.431 0.445 0.457 S22 ANG -41.3 -52.9 -58.6 -62.1 -66.4 -70.7 -74.9 -79.0 -82.5 -85.9 -88.8 -91.7 -94.4 -96.9 -99.4 -101.9 K 0.42 0.68 0.92 1.02 1.05 1.07 1.07 1.07 1.07 1.06 1.05 1.04 1.03 1.02 1.01 1.00 MAG (dB) 31.0 27.5 22.9 19.1 16.2 14.2 12.7 11.4 10.4 9.6 8.9 8.3 7.8 7.4 7.1 7.1 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE856M02 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 135 S21 0.1 GHz S21 3 GHz 180 S22 0.1 GHz 90 45 j10 S11 3 GHz S12 3 GHz S12 0.1 GHz 0 0 -j10 S22 3 GHz S11 0.1 GHz -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz VCE = 10 V, IC = 20 mA 225 270 315 NE856M02 VCE = 10 V, IC = 20 mA FREQUENCY (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.508 0.425 0.384 0.376 0.374 0.374 0.375 0.375 0.375 0.376 0.377 0.378 0.380 0.382 0.385 0.388 ANG -78.9 -120.5 -156.2 -173.7 174.4 164.9 156.8 149.5 142.7 136.2 130.1 123.9 118.2 112.6 107.0 101.4 MAG 29.606 18.715 10.140 6.875 5.192 4.168 3.481 2.990 2.620 2.337 2.109 1.922 1.770 1.640 1.531 1.435 S21 ANG 131.4 110.2 92.5 82.6 75.0 68.3 62.2 56.6 51.2 46.1 41.2 36.5 32.1 27.8 23.7 19.8 MAG 0.019 0.029 0.043 0.058 0.074 0.090 0.106 0.122 0.137 0.153 0.168 0.183 0.198 0.213 0.227 0.242 S12 ANG 57.0 57.5 62.1 64.6 65.4 65.3 64.5 63.4 61.9 60.3 58.6 56.8 54.8 53.2 51.1 49.1 MAG 0.707 0.500 0.373 0.347 0.346 0.356 0.370 0.387 0.406 0.424 0.443 0.461 0.478 0.494 0.508 0.521 S22 ANG -34.0 -42.7 -45.9 -48.9 -53.4 -58.2 -63.0 -67.7 -71.9 -75.9 -79.4 -82.9 -85.9 -88.8 -91.7 -94.5 K 0.43 0.65 0.91 1.01 1.05 1.07 1.07 1.07 1.06 1.05 1.04 1.03 1.01 0.99 0.98 0.97 MAG (dB) 32.0 28.1 23.7 20.0 17.1 15.0 13.5 12.3 11.3 10.4 9.7 9.2 8.9 8.9 8.3 7.7 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE856M02 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 135 S21 0.1 GHz 45 90 j10 S11 3 GHz S21 3 GHz 180 S12 0.1 GHz S12 3 GHz 0 0 S11 0.1 GHz -j10 S22 3 GHz S22 0.1 GHz -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz VCE = 10 V, IC = 50 mA 225 270 315 NE856M02 VCE = 10 V, IC = 50 mA FREQUENCY (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.388 0.380 0.377 0.378 0.379 0.380 0.381 0.382 0.381 0.382 0.383 0.383 0.385 0.386 0.389 0.392 ANG -113.0 -147.3 -172.1 175.4 166.1 158.2 151.2 144.7 138.5 132.5 126.8 121.0 115.6 110.2 104.8 99.5 MAG 35.396 20.013 10.398 6.989 5.262 4.218 3.521 3.023 2.650 2.362 2.132 1.943 1.789 1.657 1.547 1.450 S21 ANG 119.8 102.2 88.1 79.6 72.7 66.5 60.7 55.3 50.1 45.1 40.2 35.6 31.2 27.0 22.9 19.0 MAG 0.015 0.023 0.040 0.057 0.075 0.092 0.109 0.125 0.141 0.157 0.173 0.188 0.203 0.218 0.232 0.246 S12 ANG 64.1 66.1 70.5 71.3 71.0 69.4 67.8 65.9 64.0 62.0 59.9 57.7 55.6 53.6 51.3 49.3 MAG 0.569 0.399 0.325 0.316 0.324 0.337 0.354 0.373 0.393 0.412 0.432 0.451 0.468 0.485 0.500 0.513 S22 ANG -38.2 -40.5 -41.0 -44.8 -50.2 -55.9 -61.1 -66.2 -70.7 -74.9 -78.6 -82.1 -85.3 -88.3 -91.2 -94.0 K 0.60 0.85 1.00 1.05 1.06 1.07 1.06 1.06 1.05 1.04 1.03 1.01 1.00 0.98 0.97 0.96 MAG (dB) 33.7 29.4 23.7 19.5 16.9 15.1 13.6 12.4 11.4 10.6 9.9 9.4 9.5 8.8 8.2 7.7 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 11/14/2001 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability. |
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